Question

In silicon at T = 300 K the thermal-equilibrium concentration of electron is n0 = 5 x 10^4 cc. The hole concentration is

(a) 4.5 x 10^15 cc

(b) 4.5 x 10^15 m^3

(c) 0.3 x 10^-6 cc

(d) 0.3 x 10^-6 m^3

This question was posed to me during an interview.

This is a very interesting question from Semiconductor Physics topic in chapter EDC Overview of Electronic Devices & Circuits

Answer 1

The correct option is (a) 4.5 x 10^15 cc

The best I can explain: ni x ni = no x po.