Which of the following describes the action of storing a bit of data in a mask ROM?
(a) A 0 is stored by connecting the gate of a MOS cell to the address line
(b) A 0 is stored in a bipolar cell by shorting the base connection to the address line
(c) A 1 is stored by connecting the gate of a MOS cell to the address line
(d) A 1 is stored in a bipolar cell by opening the base connection to the address line
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I want to ask this question from Erasable Programmable Read Only Memory topic in division Memory Devices of Digital Circuits