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The flip-flop in static memory cell can be constructed using ____________

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The flip-flop in static memory cell can be constructed using ____________

(a) Capacitor or MOSFET

(b) FET or JFET

(c) Capacitor or BJT

(d) BJT or MOSFET

I have been asked this question in semester exam.

The origin of the question is Random Access Memory in portion Memory Devices of Digital Circuits

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Correct option is (d) BJT or MOSFET

Easy explanation: The flip-flop in the static memory cell can be constructed using Bipolar Junction Transistor (BJT) and MOSFETs because of it’s storing capability. Also, it’s access time is less and it is faster in operation.

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