Question

Consider a bar of silicon having carrier concentration n0=10^15 cm^-3 and ni=10^10cm^-3. Assume the excess carrier concentrations to be n=10^13cm^-3, calculate the quasi-fermi energy level at T=300K?

(a) 0.2982 eV

(b) 0.2984 eV

(c) 0.5971 eV

(d) 1Ev

The question was posed to me in an interview.

The above asked question is from Fermi Level in a Semiconductor having Impurities topic in portion Conduction in Semiconductors of Electronic Devices & Circuits

Answer 1

Correct choice is (b) 0.2984 eV

Explanation: =1.38*10^-23*300*ln(10^13+10^15/10^13)

=0.2984 eV.