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PIN diode is a photosensitive diode because of _______

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PIN diode is a photosensitive diode because of _______

(a) large current  flow in p and n  region

(b) depletion layer increases giving a larger surface area

(c) stronger covalent bonds

(d) low carrier storage

I have been asked this question during an interview.

My question is based upon p-i-n Diode and its Characteristics in section Semiconductor-Diode Characteristics of Electronic Devices & Circuits

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The correct answer is (b) depletion layer increases giving a larger surface area

The best I can explain: An intrinsic layer that is sandwiched between p and n layers. This gives a larger surface area making it compatible for photosensitivity. Reverse bias causes an increased depleted region in a PIN diode.

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