Which of the following is not true for a Schottky-Barrier Diode (SBD)?
(a) It is formed by bringing metal into contact with a moderately doped n-type semiconductor material.
(b) In the SBD, current is conducted by mainly by minority carriers.
(c) The forward voltage drop of a conducting SBD is lower than that of a pn-junction diode.
(d) SBD are used in the design of a special form of bipolar-transistor logic circuits
The question was asked during an interview.
My question is taken from Limiting and Clamping Circuits and Some Special Types of diodes in chapter Diodes of Electronic Devices & Circuits