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Which of the following relation is true about gate current?

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Which of the following relation is true about gate current?

(a) IG=ID+IS

(b) ID=IG

(c) IS= IG

(d) IG=0

The question was posed to me by my school teacher while I was bunking the class.

The question is from Biasing the FET topic in chapter Field-Effect Transistors of Electronic Devices & Circuits

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The correct option is (d) IG=0

To elaborate: The FET physical structure which contains silicon dioxide provides infinite resistance. Hence no current will flow through the gate terminal.

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