Question

The structure of the IGBT is a

(a) P-N-P structure connected by a MOS gate

(b) N-N-P-P structure connected by a MOS gate

(c) P-N-P-N structure connected by a MOS gate

(d) N-P-N-P structure connected by a MOS gate

I have been asked this question in quiz.

My enquiry is from IGBTs-1 in chapter Power Electronics Devices of Power Electronics

Answer 1

The correct choice is (c) P-N-P-N structure connected by a MOS gate

The explanation is: The IGBT is a semiconductor device with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action.