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In a power transistor, the IB vs VBE curve is

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in Power Electronics by (27.1k points)
In a power transistor, the IB vs VBE curve is

(a) a parabolic curve

(b) an exponentially decaying curve

(c) resembling the diode curve

(d) a straight line Y = IB

I got this question in final exam.

My question is based upon Power Transistor-1 topic in division Power Electronics Devices of Power Electronics

1 Answer

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by (45.1k points)
The correct choice is (c) resembling the diode curve

The best explanation: The B-E junction of a BJT resembles a p-n junction diode, hence the curve.

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