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In the internal structure of a MOSFET, a parasitic BJT exists between the

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in Power Electronics by (27.1k points)
In the internal structure of a MOSFET, a parasitic BJT exists between the

(a) source & gate terminals

(b) source & drain terminals

(c) drain & gate  terminals

(d) there is no parasitic BJT in MOSFET

I have been asked this question in exam.

I'd like to ask this question from MOSFETs-1 in portion Power Electronics Devices of Power Electronics

1 Answer

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by (45.1k points)
The correct choice is (b) source & drain terminals

Explanation: Examine the internal structure of a MOSFET, notice the n-p-n structure between the drain & source. A p-channel MOSFET will have a p-n-p structure.

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