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How can the location of the Zener region be controlled in the diode characteristic curve?

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How can the location of the Zener region be controlled in the diode characteristic curve?

(a) By changing the value of Iz

(b) By changing the doping concentration of the diode

(c) By changing the operating temperature

(d) By increasing the size of diode

I had been asked this question during an interview.

The doubt is from Types of Diode and their Testing topic in division Diode Circuit of Analog Circuits

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The correct choice is (b) By changing the doping concentration of the diode

The explanation is: An increase in doping will lead to an increase in the concentration of impurities, which would further lead to a change in VZ and hence change in the Zener region.

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