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During high frequency applications of a B.J.T., which parasitic capacitors arise between the base and the emitter?

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During high frequency applications of a B.J.T., which parasitic capacitors arise between the base and the emitter?

(a) Cje and Cb

(b) Ccs

(c) Cb

(d) Ccs and Cb

The question was asked in unit test.

I'd like to ask this question from Effect of Various Capacitors on Frequency Response in chapter Transistor Frequency Response of Analog Circuits

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The correct answer is (a) Cje and Cb

For explanation: There are two capacitors that arise between bases and emitter. One is Cje due to depletion region associated between base and emitter. Cb is another capacitor which arises due to the accumulation of electrons in the base which further results into the concentration gradient within the base of the transistor.

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