Question

The full form of FAMOS is _____________

(a) Floating Gate Avalanche Injection MOS

(b) Float Gate Avalanche Injection MOS

(c) Floating Gate Avalanche Induction MOS

(d) Float Gate Avalanche Induction MOS

I had been asked this question in examination.

My doubt is from Programmable Read Only Memory in section Memory Devices of Digital Circuits

Answer 1

Right option is (a) Floating Gate Avalanche Injection MOS

To explain I would say: The full form of FAMOS is Floating Gate Avalanche Injection MOS. It is a floating gate transistor in which the trapped electrons is responsible for the dropping of the voltage.