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Which gas is used to fill the chamber in the grown junction type transistor construction?

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Which gas is used to fill the chamber in the grown junction type transistor construction?

(a) helium

(b) boron

(c) nitrogen

(d) oxygen

I have been asked this question in my homework.

I need to ask this question from Transistor Construction in section Transistor Characteristics of Electronic Devices & Circuits

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Right choice is (c) nitrogen

For explanation I would say: In the process of transistor construction, a crucible is placed in the chamber. This chamber consists of hydrogen or nitrogen. These gases help in the prevention of oxidation. It also contains purified Ge or Si at a temperature few degrees above its melting point.

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