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Which of the following methods take impurity variation method for transistor construction?

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Which of the following methods take impurity variation method for transistor construction?

(a) alloy type diffusion

(b) grown junction type

(c) epitaxial type

(d) mesa type

I had been asked this question in unit test.

My query is from Transistor Construction topic in section Transistor Characteristics of Electronic Devices & Circuits

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The correct choice is (b) grown junction type

The explanation: In impurity variation method, the impurity content of the semiconductor is altered in its type as well as the quantity. For example, in making NPN germanium grown junction transistor, a small type of N type impurity is added to molten germanium and the crystal growth is started.

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