For small-signal operation around the dc bias point, the diode is modeled by a resistance equal to the
(a) Slope of the i-v characteristics of the diode at the bias point
(b) Square root of the slope of the i-v characteristics of the diode at the bias point
(c) Inverse of the slope of the i-v characteristics of the diode at the bias point
(d) Square root of the inverse of the slope of the i-v characteristics of the diode at the bias point
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Asked question is from Modelling the Diode Forward Characteristics in chapter Diodes of Electronic Devices & Circuits