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Which one is the most suitable power device for high frequency (>100 kHz) switching application?

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Which one is the most suitable power device for high frequency (>100 kHz) switching application?

(a) BJT

(b) Power MOSFET

(c) Schottkey diode

(d) Microwave transistor

I had been asked this question during an interview.

I need to ask this question from Power BJTs topic in chapter Differential and Multistage Amplifiers of Electronic Devices & Circuits

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The correct option is (b) Power MOSFET

For explanation: Power MOSFET has a low turn off time. So it can be operated in a frequency range of 1 to 10 MHz.

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