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Insulated-gate bipolar transistor (IGBT) has combinational advantages of ______

(a) BJTs and SITs

(b) BJTs and MOSFETs

(c) SITs and MOSFETs

(d) FETs and BJTs

I got this question during an online exam.

My enquiry is from Power BJTs topic in division Differential and Multistage Amplifiers of Electronic Devices & Circuits

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Correct answer is (b) BJTs and MOSFETs

The best I can explain: IGBT combines advantages of BJTs and MOSFETs. IGBT process high input impedance like a MOSFET and has low on state power loss as in BJTs.

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