Question

Which of the following is the necessary to hold drain current in 0 for p channel E-MOSFET?

(a) Vgs > Vt

(b) Vgs < Vt

(c) Vgs < 2Vt

(d) 2Vgs > Vt

I got this question in a national level competition.

Origin of the question is The Insulated-Gate FET(MOSFET) in portion Field-Effect Transistors of Electronic Devices & Circuits

Answer 1

Correct answer is (a) Vgs > Vt

The explanation is: For Vgs > Vt, both of the drain-substrate and source-substrate will be reverse biased and hence the depletion region is narrower. Hence the channel is not created and hence there will be no electron flow from source to drain. Therefore the drain current will be zero.