The threshold voltage of an n-channel MOSFET can be controlled by which of the following parameter?
(a) Increasing the channel dopant concentration
(b) Reducing the channel dopant concentration
(c) Reducing the gate-oxide thickness
(d) Reducing the channel
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This interesting question is from The Insulated-Gate FET(MOSFET) in division Field-Effect Transistors of Electronic Devices & Circuits