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The threshold voltage of an n-channel MOSFET can be controlled by which of the following parameter?

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The threshold voltage of an n-channel MOSFET can be controlled by which of the following parameter?

(a) Increasing the channel dopant concentration

(b) Reducing the channel dopant concentration

(c) Reducing the gate-oxide thickness

(d) Reducing the channel

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This interesting question is from The Insulated-Gate FET(MOSFET) in division Field-Effect Transistors of Electronic Devices & Circuits

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The correct answer is (b) Reducing the channel dopant concentration

For explanation: The threshold voltage of n-channel  MOSFET can be increased by reducing the channel dopant concentration or by increasing the oxide thickness.

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