Question

At room temperature, what is the possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET?

(a) 450 cm^2/v-s

(b) 1350 cm^2/v-s

(c) 1800 cm^2/v-s

(d) 3600cm^2/v-s

I have been asked this question in final exam.

This intriguing question comes from The Insulated-Gate FET(MOSFET) topic in chapter Field-Effect Transistors of Electronic Devices & Circuits

Answer 1

Correct answer is (b) 1350 cm^2/v-s

Easy explanation: The mobility of electron in s-type Si semiconductor is 1350 cm^2/v-s.

In Inversion layer mobility of electron is 1350 cm^2/v-s.