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Which of the following is true for a npn transistor in the saturation region?

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Which of the following is true for a npn transistor in the saturation region?

(a) The potential difference between the collector and the base is approximately 0.2V

(b) The potential difference between the collector and the base is approximately 0.3V

(c) The potential difference between the collector and the base is approximately 0.4V

(d) The potential difference between the collector and the base is approximately 0.5V

The question was asked in an interview for internship.

My question is from BJT Circuits at DC in chapter Bipolar Junction Triodes (BJTs) of Electronic Devices & Circuits

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The correct choice is (d) The potential difference between the collector and the base is approximately 0.5V

Easy explanation: The commonly used npn transistors have a potential difference of around 0.5V between he collector and the base.

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