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Which of the following is true for the active region of an npn transistor?

(a) The collector current is directly proportional to the base current

(b) The potential difference between the emitter and the collector is less than 0.4 V

(c) All of the mentioned

(d) None of the mentioned

I got this question in a national level competition.

My doubt is from BJT Circuits at DC topic in division Bipolar Junction Triodes (BJTs) of Electronic Devices & Circuits

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Correct choice is (c) All of the mentioned

For explanation: The base current and the collector current are directly proportional to each other and the potential difference between the collector and the base is always less than 0.4 V.

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