Question

Which of the following is true for a typical active region of an npn transistor?

(a) The potential difference between the emitter and the collector is less than 0.5 V

(b) The potential difference between the emitter and the collector is less than 0.4 V

(c) The potential difference between the emitter and the collector is less than 0.3 V

(d) The potential difference between the emitter and the collector is less than 0.2 V

This question was addressed to me during an interview.

My question is taken from BJT Circuits at DC topic in portion Bipolar Junction Triodes (BJTs) of Electronic Devices & Circuits

Answer 1

Right option is (c) The potential difference between the emitter and the collector is less than 0.3 V

The explanation: Most commonly used transistors have Vce less than 0.4 V for the active region.