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The potential difference between the base and the collector Vcb in a pnp transistor in saturation region is ________

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The potential difference between the base and the collector Vcb in a pnp transistor in saturation region is ________

(a) -0.2 V

(b) -0.5V

(c) 0.2 V

(d) 0.5 V

This question was addressed to me by my school principal while I was bunking the class.

The origin of the question is BJT Circuits at DC topic in portion Bipolar Junction Triodes (BJTs) of Electronic Devices & Circuits

1 Answer

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Best answer
The correct answer is (b) -0.5V

Easiest explanation: The value of Vcb is -0.5V for a pnp transistor and 0.5V for an npn transistor.

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